International Rectifier IRF6709S2TRPbF
Power MOSFET
IRF6709S2TRPbF Specifications
- Mount Type : Surface Mount
- Breakdown Voltage : 25V
- RDS(on) Max : 3.8mΩ
- Drain-Source Resistance : 7.8mΩ
- Input Capacitance : 1.01nF
- Terminals : 2
- Rise Time : 25ns
- Fall Time : 9.5ns
- Max Power Dissipation : 21W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRF6709S2TRPbF |
|---|---|
| Datasheet | IRF6709S2TRPbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6709S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters.
