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IRF6892STR1PBF Datasheet PDF

International Rectifier IRF6892STR1PBF

Power MOSFET

Part No. IRF6892STR1PBF
Datasheet IRF6892STR1PBF Download
Manufacturer
International Rectifier
Description Power MOSFET
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IRF6892STR1PBF datasheet page 1 preview

DESCRIPTION

The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses...
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