DESCRIPTION
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET N-CHANNEL MOSFET 18 27 36 45 P-CHANNEL MOSFET Top View D1 N-Ch P-Ch D1 VDSS D2 D2 RDS(on) 25V -25V 0.10Ω 0.25Ω ID 3.5A -2.3A SO-8 Base part number Orderable part number Package Type IRF7105QPbF IRF7105QTRPbF IRF7105QPbF SO-8 SO-8 Standard Pack Form Quantity Tape and Reel 4000 Tube 95 EOL Notice EOL 527 EOL 529 Replacement Part Number Please search the EOL part number on IR’s website for guidance ABSOLUTE MAXIMUM RATINGS
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VG...
International Rectifier
