DESCRIPTION
Top View Fifth Generation power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 30 7.3 5.8 58 2.5 1.6 0.02 ± 20 30 70 5.0 -55 to + 150 Units V A W W/°C V V mJ V/ns °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Typ. ––– Max.
International Rectifier
