DESCRIPTION
l HEXFET® Power MOSFET S 1 2 3 4 8 7 A D D D D S S G VDSS = -30V RDS(on) = 0.070Ω ID = -4.6A 6 5 Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -4.6 -3.7 -15 2.5 0.020 ± 20 -3.0 -55 to + 150 Units A W W/°C V V/nS °C Thermal Resistance Ratings RθJA Maximum Junction-to-Ambient Parameter Min. Typ. Max.
International Rectifier
