DESCRIPTION
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. HEXFET® Power MOSFET A 1 8D 2 7D VDSS = -14V 3 6D 4 5 D RDS(on) = 0.012Ω T op V ie w SO-8 ABSOLUTE MAXIMUM RATINGS
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient Max. -14 ±11 ±8.8 ±88 2.5 1.6 0.02 110 ± 12 -55 to + 150 Max. 50 Units V A W W/°C mJ V °C Units °C/W 1 7/16/99 IRF7220 ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Parameter Min.
International Rectifier
