DESCRIPTION
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Top View SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 ±9.5 ±6.0 ±76 2.5 1.6 0.02 60 ± 12 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max. 50 Units °C/W 1 11/9/04 IRF7233PbF ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
International Rectifier
