DESCRIPTION
S1 8 A D New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3 7D 6D per silicon area. SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Max. -40 -6.2 -4.9 -25 2.5 1.6 20 ± 20 -55 to + 150 Units V A W mW/°C V °C Typ. ––– ––– Max. 20 50 Units °C/W 1 10/6/04 IRF7241PbF ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th)...
International Rectifier
