DESCRIPTION
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 96103A IRF7303QPbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = 30V S2 3 G2 4 6 D2 5 D2 RDS(on) = 0.050Ω Top View SO-8 ABSOLUTE MAXIMUM RATINGS
ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec. Pulsed Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient Max.
International Rectifier
