IRF7304 Datasheet PDF | International Rectifier

International Rectifier IRF7304

This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Part No.	IRF7304
Datasheet	IRF7304 Download
Manufacturer	International Rectifier
Description	Generation V Technology
Buy	Stock & Price

DESCRIPTION

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 D2 D2 2 7 VDSS = -20V RDS(on) = 0.090Ω 3 6 4 5 Top View SO-8

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, V GS @ -4.5V Continuous Drain Current, V GS @ -4.5V Continuous Drain Current, V GS @ -4.5V Pulsed Drain Current Power Dissipation (PCB Mount)** Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -4.0 -3.6 -2.9 -14 1.4 0.011 ±8.0 -1.2 -55 to + 150 Units A A A A W W/°C V V/ns °C Thermal Resistance Parameter RθJA Junction-to-Amb. (PCB Mount, steady state)** Min. –––– Typ. –––– Max.