IRF7306 Datasheet PDF | International Rectifier

International Rectifier IRF7306

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Part No.	IRF7306
Datasheet	IRF7306 Download
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Buy	Stock & Price

DESCRIPTION

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. To p V ie w S O -8

ABSOLUTE MAXIMUM RATINGS

Parameter I D @ TA = 25°C I D @ TA = 25°C I D @ TA = 70°C I DM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -4.0 -3.6 -2.9 -14 2.0 0.016 ±20 -5.0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient Typ. ––– Max.