DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. PD - 95179 IRF7307PbF HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 20V -20V RDS(on) 0.050Ω 0.090Ω SO-8 ABSOLUTE MAXIMUM RATINGS
ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec. Pulse Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max.
International Rectifier
