International Rectifier IRF7309IPbF
This product has been designed and qualified for the Industrial market.| Part No. | IRF7309IPbF |
|---|---|
| Datasheet | IRF7309IPbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PD - 96086 IRF7309IPbF 1 07/07/06 IRF7309IPbF 2 IRF7309IPbF 3 IRF7309IPbF 4 IRF7309IPbF 5 IRF7309IPbF 6 IRF7309IPbF 7 IRF7309IPbF 8 IRF7309IPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer - + - - +
● dv/dt controlled by RG +
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 24 For N and P Channel HEXFETS 9 IRF7309IPbF SO-8 Package Outline Dimensions are shown in milimeters (inches) 9 6 $ % @ '&%$ !"# 7 C !$Ãb dà 6 %Y r r 'YÃi 6 !$Ãb dà 8 6 7 6 8 Ãb #dà 9DH DI8C@T...
