International Rectifier IRF7309QPBF
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.| Part No. | IRF7309QPBF |
|---|---|
| Datasheet | IRF7309QPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRF7309QPbF HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch G1 2 S2 3 7 D1 VDSS 6 D2 30V -30V G2 4 5 D2 RDS(on) 0.050Ω 0.10Ω P-CHANNEL MOSFET Top View SO-8 1 08/02/10 IRF7309QPbF nA 2 IRF7309QPbF 3 IRF7309QPbF 4 IRF7309QPbF 5 IRF7309QPbF 6 IRF7309QPbF 7 IRF7309QPbF 8 IRF7309QPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + - -+
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W.
