International Rectifier IRF7316QPBF
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.| Part No. | IRF7316QPBF |
|---|---|
| Datasheet | IRF7316QPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 96126A IRF7316QPbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = -30V S2 3 6 D2 G2 4 5 D2 RDS(on) = 0.058Ω Top View SO-8ABSOLUTE MAXIMUM RATINGS
( TA = 25°C Unless Otherwise Noted) Symbol Maximum Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA = 25°C TA = 70°C Continuous Source Current (Diode Conduction) Maximum Power Dissipation Single Pulse Avalanche Energy TA = 25°C TA = 70°C VDS VGS ID IDM IS PD EAS -30 ± 20 -4.9 -3.9 -30 -2.5 2.0 1.3 140 Avalanche Current IAR -2.8 Repetitive Avalanche Energy...
