DESCRIPTION
l l HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch -20V 6 5 P-CHANNEL MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View RDS(on) 0.029Ω 0.058Ω SO-8 ABSOLUTE MAXIMUM RATINGS
( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C V DS V GS N-Channel 20 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -5.0 -55 to + 150 °C 150 -2.9 Maximum P-Channel -20 ± 12 -5.3 -4.3 -21 -2.5 Units Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy...
International Rectifier
