APPLICATIONS
P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free A A S G 1 2 3 4 8 7 6 K K D D VDSS = -20V RDS(on) = 0.058Ω Schottky Vf = 0.39V 5 Top View DESCRIPTION
Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Maximum -5.3 -4.3 -4...
International Rectifier
