APPLICATIONS
l Generation V Technology l SO-8 Footprint l Lead-Free A1 A2 S3 G4 8K 7K 6D 5D DESCRIPTION
Top View Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. VDSS = -20V RDS(on) = 0.27Ω Schottky Vf = 0.39V The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C dV/dt Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current fPower Dissipation fPower Dissipation dPeak Diode Recovery TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Max. -20 ± 12 -2.2 -1.
International Rectifier
