International Rectifier IRF7326D2
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.APPLICATIONS
P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 7 K K D D VDSS = -30V RDS(on) = 0.10Ω Schottky Vf = 0.52V 2 3 6 4 5 Top Vie wDESCRIPTION
Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. S O -8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics.ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum -3.6 -2.9 -29 2.0...