IRF7328PBF Datasheet PDF | International Rectifier

International Rectifier IRF7328PBF

This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

Part No.	IRF7328PBF
Datasheet	IRF7328PBF Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

DESCRIPTION

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8

ABSOLUTE MAXIMUM RATINGS

Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor VGS TJ , TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max. -30 -8.0 -6.4 -32 2.0 1.3 16 ± 20 -55 to + 150 Units V A W W mW/°C V °C Max. 62.5 Units °C/W 1 12/03/10 IRF7328PbF

ELECTRICAL CHARACTERISTICS

@ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Dra...