International Rectifier IRF7331PbF
HEXFET Power MOSFET
| Part No. | IRF7331PbF |
|---|---|
| Datasheet | IRF7331PbF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 3 6 4 5 Top View SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 7.0 5.5 28 2.0 1.3 16 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 62.5 Units °C/W 1 05/18/04 IRF7331PbFELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total G...
