DESCRIPTION
The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFETMOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications. With these improvements multiple devices can be used in an application with dramatically reduced board space. Internal connections enable easier board layout design with reduced stray inductance. ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS EAS (6 sigma) TJ TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
International Rectifier
