DESCRIPTION
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 96108A IRF7341QPbF HEXFET® Power MOSFET VDSS 55V RDS(on) max 0.050@VGS = 10V 0.065@VGS = 4.5V ID 5.1A 4.42A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR TJ , TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Junction and Storage Temperature Range Thermal Resistance Parameter Max.
International Rectifier
