DESCRIPTION
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRF7343QPBF HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch G1 2 S2 3 7 D1 VDSS 55V -55V 6 D2 G2 4 5 D2 P-CHANNEL MOSFET RDS(on) 0.050Ω 0.105Ω Top View SO-8 ABSOLUTE MAXIMUM RATINGS
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS IAR EAR VGS dv/dt TJ, TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to...
International Rectifier
