International Rectifier IRF7351PbF
Power MOSFET
| Part No. | IRF7351PbF |
|---|---|
| Datasheet | IRF7351PbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF7351PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 60V 17.8mΩ@VGS = 10V 24nC Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current fPower Dissipation fPower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Max. 60 ± 20 8.0 6.4 64 2.0 1.28 0.016 -55 to + 150 Units V A W W/°C °C Typ. ––– ––– Max. 20 62.5 Units °C/W Notes through are on page 10 1 11/18/09 IRF7351PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
