DESCRIPTION
Additional features of These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. G1 S2 G2 Top View SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 80 ± 20 3.6 2.9 29 2.0 0.02 2.3 -55 to + 150 Units V h A W W/°C V/ns °C c Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and e Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) * Typ. ––– ––– Max. 42 50 Units °C/W Notes through are on page 8 1 08/09/10 Free Datasheet IRF7380QPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
International Rectifier
