DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. PD - 95724 IRF7401PbF HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS = 20V RDS(on) = 0.022Ω SO-8 ABSOLUTE MAXIMUM RATINGS
ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec. Pulsed Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 10 8.7 7.0 35 2.5 0.02 ± 12 5.0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ratings RθJA Parameter Maximum Junction-to-Ambient Typ. Max.
International Rectifier
