DESCRIPTION
These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area. G4 8 A D 7D 6D 5D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. The package is designed for vapor phase, infrared, or wave soldering techniques. Top View SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -16 -13 -65 2.5 1.6 20 ±8 -55 to +150 Units V A W mW/°C V °C Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient Max. 50 Units °C/W 1 11/17/08 IRF7410PbF ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
International Rectifier
