APPLICATIONS
l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint DESCRIPTION
Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. FETKY TM MOSFET & Schottky Diode A1 A2 S3 AA 8D 7D VDSS = -20V 6 D RDS(on) = 0.09Ω G4 5D Schottky Vf = 0.52V Top View SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. ABSOLUTE MAXIMUM RATINGS
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Thermal Resistance Ratings Para...
International Rectifier
