IRF7451 Datasheet PDF

APPLICATIONS

l High frequency DC-DC converters IRF7451 HEXFET® Power MOSFET VDSS 150V RDS(on) max 0.09Ω ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation† Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 3.6 2.9 29 2.5 0.02 ± 30 7.9 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient † Typ. ––– ––– Max. 20 50 Units °C/W Notes  through † ar...