International Rectifier IRF7459PbF
Power MOSFET
| Part No. | IRF7459PbF |
|---|---|
| Datasheet | IRF7459PbF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET VDSS 20V RDS(on) max ID 9.0mΩ 12A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 12 12 10 100 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Notes through are on page 8 Typ. ––– ––– Max. 20 50 Units °C/W 1 4/17/06 IRF7459PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
