International Rectifier IRF7460PBF
HEXFET Power MOSFET
| Part No. | IRF7460PBF |
|---|---|
| Datasheet | IRF7460PBF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l l l S S S G IRF7460PbF HEXFET® Power MOSFET VDSS 20V RDS(on) max(mW) 10@VGS = 10V ID 12A 1 2 3 4 8 7 A A D D D D Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 6 5 Top View SO-8ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 20 12 10 100 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W...
