IRF7483M Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Avalanche Characteristics EAS (Thermally limited) EAS (Thermally limited) EAS (tested) IAR EAR Single Pulse Avalanche Energy  Single Pulse Avalanche Energy  Single Pulse Avalanche Energy Tested Value  Avalanche Current  Repetitive Avalanche Energy  Max. 135 86 540 74 0.59 ± 20 -55 to + 150 Units A W W/°C V °C 69 152 mJ 147 See Fig.15,16, 23a, 23b A mJ Thermal Resistance Symbol Parameter R●JA R●JA R●JA R●JC R●J-PCB Junction-to-Ambient  Junction-to-Ambient  Junction-to-Ambient  Junction-to-Case  Junction-to-PCB Mounted Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.