International Rectifier IRF7495
Power MOSFET
| Part No. | IRF7495 |
|---|---|
| Datasheet | IRF7495 Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters PD - 94683C IRF7495 VDSS 100V HEXFET® Power MOSFET RDS(on) max ID : 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce S 1 Switching Losses l Fully Characterized Capacitance Including S 2 AA 8 D 7 D Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage S 3 G 4 6 D 5 D and Current Top View SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current Maximum Power Dissipation dv/dt TJ TSTG Linear Derating Factor h Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead e Junction-to-Ambient (PCB Mount) Notes through are on page 8 Max. 100 ± 20 7.3 4.6 58 2.5 0.02 7.3 -55 to + 150 Units V A W W/°C V/ns °C Typ. ––– ––– Max. 20 50 Units °C/W 1 04/12/06 IRF7495 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
