International Rectifier IRF7811AV
The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques.| Part No. | IRF7811AV |
|---|---|
| Datasheet | IRF7811AV Download |
| Manufacturer |  International Rectifier |
| Description | N-Channel Application-Specific MOSFET |
| Buy | Stock & Price |
DESCRIPTION
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Power dissipation of greater than 2W is possible in a typical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11mΩ 17nC 6.7nC 8.1nCABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RθJA RθJL Max. 50 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TL = 90°C IDM PD Symbol VDS VGS ID IRF7811AV 30 ±20 10.8 11.8 100 2.5 3.0 –55 to 150 2.5 5...
