International Rectifier IRF9Z24NPBF
HEXFET Power MOSFET
| Part No. | IRF9Z24NPBF |
|---|---|
| Datasheet | IRF9Z24NPBF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
● Lead-Free PD - 94982 IRF9Z24NPbF 1 02/05/04 IRF9Z24NPbF 2 IRF9Z24NPbF 3 IRF9Z24NPbF 4 IRF9Z24NPbF 5 IRF9Z24NPbF 6 IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + - + Circuit Layout Considerations
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer - - + RG VGS
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [ VDD] [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-channel HEXFETS 7 IRF9Z24NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A- 15.24 (.600) 14.84 (.584) 6.47 (.255) 4...
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer - - + RG VGS
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [ VDD] [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-channel HEXFETS 7 IRF9Z24NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A- 15.24 (.600) 14.84 (.584) 6.47 (.255) 4...
