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IRFB11N50 Datasheet PDF

International Rectifier IRFB11N50

Power MOSFET

Part No. IRFB11N50
Datasheet IRFB11N50 Download
Manufacturer
International Rectifier
Description Power MOSFET
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IRFB11N50 datasheet page 1 preview

APPLICATIONS

l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V Rds(on) max 0.52Ω ID 11A TO-220AB G D S

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 11 7.0 44 170 1.3 ± 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l l l Two Transistor Forward Half & Full Bridge Power Factor Correction Boost through are on...
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