IRFB3077PBF Datasheet PDF

APPLICATIONS

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G IRFB3077PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 75V 2.8m: 3.3m: ID (Silicon Limited) 210A c S ID (Package Limited) 120A D S D G TO-220AB IRFB3077PbF G Gate

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dV/dt Peak Diode Recovery f TJ Operating Junction and TSTG Storage Temperature Range Solderin...