International Rectifier IRFB59N10DPBF
HEXFET Power MOSFET
IRFB59N10DPBF Specifications
- Package : TO-220AB
- Mount Type : Through Hole
- Current Rating : 59A
- Breakdown Voltage : 100V
- Threshold Voltage : 5.5V
- RDS(on) Max : 25mΩ
- Input Capacitance : 2.45nF
- Terminals : 3
- Channels : 1
- Rise Time : 90ns
- Fall Time : 12ns
- Max Power Dissipation : 3.8W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRFB59N10DPBF |
|---|---|
| Datasheet | IRFB59N10DPBF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High frequency DC-DC converters l UPS / Motor Control Inverters l Lead-Free IRFB59N10DPbF IRFS59N10DPbF IRFSL59N10DPbF HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.025Ω ID 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB59N10D and Current D2Pak IRFS59N10D TO-262 IRFSL59N10DABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 59 42 236 3.8 200 1.3 ± 30 3.3 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) U...
