International Rectifier IRFB7740PBF
Power MOSFET
| Part No. | IRFB7740PBF |
|---|---|
| Datasheet | IRFB7740PBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff.(ER) Coss eff.(TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) Min. 167 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 81 21 27 54 12 60 55 45 4650 370 240 330 425 Max. Units Conditions ––– S VDS = 10V, ID =52A 122 ID = 52A ––– ––– nC VVDGSS = = 38V 10V ––– ––– VDD = 38V ––– ––– ns ID = 52A RG= 2.7 ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig.7 ––– VGS = 0V, VDS = 0V to 60V ––– VGS = 0V, VDS = 0V to 60V Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. ––– ––– Typ. ––– ––– Max.
