International Rectifier IRFB812PBF
Power MOSFET
| Part No. | IRFB812PBF |
|---|---|
| Datasheet | IRFB812PBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
● Zero Voltage Switching SMPS● Uninterruptible Power Supplies
● Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. ID 500V 1.75Ω 75ns 3.6A
FEATURES AND BENEFITS
● Fast body diode eliminates the need for external diodes in ZVS applications.● Lower Gate charge results in simpler drive requirements.
● Higher Gate voltage threshold offers improved noise immunity. TO-220AB Units A W W/°C V V/ns °C
ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10lb in (1.1N m) Max. 3.6 2.3 14.4 78 0.63 ± 20 32 -55 to + 150 e Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton x x Paramet...
