International Rectifier IRFBA90N20
Power MOSFET
| Part No. | IRFBA90N20 |
|---|---|
| Datasheet | IRFBA90N20 Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
High frequency DC-DC converters VDSS 200V RDS(on) max 0.023Ω ID 98A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Super-220™ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended Clip Force Max. 98 71 390 650 4.3 ± 30 6.3 -55 to + 175 300 (1.6mm from case ) 20 Units A W W/°C V V/ns °C N Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.23 ––– 58 Units °C/W Notes through are on pag...
