International Rectifier IRFBC40APBF
HEXFET Power MOSFET
APPLICATIONS
l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001) VDSS 600V Rds(on) max 1.2Ω ID 6.2A TO-220AB G DSABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 6.2 3.9 25 125 1.0 ± 30 6.0 -55 to + 150 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l Single Transistor Forward Notes through are on page 8 1 2/5/04 IRFBC40APbF V(BR)DSS Static @ TJ = 25°C (unless otherwise specified) Parameter Min.