International Rectifier IRFBE30SPBF
HEXFET Power MOSFET
| Part No. | IRFBE30SPBF |
|---|---|
| Datasheet | IRFBE30SPBF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D2Pak IRFBE30S TO-262 IRFBE30LABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 4.1 2.6 16 125 1.0 ± 20 260 4.1 13 2.0 -55 to + 150 Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current W W/°C V mJ A mJ V/ns °C c Peak Diode Recovery dv/dt e Repetitive Avalanche Energy Operating Junction and Storage Temperature Range c d Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. ––– ––– ––– Typ. ––– 0.50 ––– Max.
