International Rectifier IRFBL12N50A
HEXFET Power MOSFET
APPLICATIONS
l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l VDSS 500V RDS(on) max 0.45Ω ID 13A Super-D2PakTMABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 13 8.2 52 180 1.4 ± 30 3.1 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l l Active Clamped Forward Main Switch Notes through are on page 8 1 2/16/00 IRFBL12N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(t...