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IRFD110PBF Datasheet PDF

International Rectifier IRFD110PBF

HEXFET Power MOSFET

Part No. IRFD110PBF
Datasheet IRFD110PBF Download
Manufacturer
International Rectifier
Description HEXFET Power MOSFET
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IRFD110PBF datasheet page 1 preview
PD- 95927 IRFD110PbF • Lead-Free 1 10/27/04 IRFD110PbF 2 IRFD110PbF 3 IRFD110PbF 4 IRFD110PbF 5 IRFD110PbF 6 IRFD110PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + + -
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS 7 IRFD110PbF Hexdip Package Outline Dimensions are shown in millimeters (inches) Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S IT E CODE AS S EMBLY LOT CODE Data and specifications subject to change without notice.
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