FEATURES
: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling ABSOLUTE MAXIMUM RATINGS
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 3.5 2.25 A 14 15 W 0.12 W/°C ±20 V 68 mJ —A — mJ 5.5 V/ns -55 to 150 oC 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) g For footnotes refer to the last page 1 01/22/01 IRFF110 ELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coeffici...
International Rectifier
