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IRFF310 Datasheet PDF

International Rectifier IRFF310

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance.
Part No. IRFF310
Datasheet IRFF310 Download
Manufacturer
International Rectifier
Description HEXFET TRANSISTORS
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IRFF310 datasheet page 1 preview

FEATURES

: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1A per MIL-STD-750, Method 1020

ABSOLUTE MAXIMUM RATINGS

ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight Units 1.25 0.80 A 5.5 15 W 0.12 W/°C ±20 V 0.82 mJ 1.25 A 1.5 mJ 4.0 V/ns -55 to 150 °C 300 (0.063 in. (1.6mm) from case for 10s) 0.98 (typical) g For footnotes refer to the last page 1 05/15/15 IRFF310, JANTX2N6786

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Brea...
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