FEATURES
: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling ABSOLUTE MAXIMUM RATINGS
Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 2.0 1.25 10 A 20 W 0.16 W/°C ±20 V 0.242 mJ 2.2 A 2.0 mJ 4.0 -55 to 150 V/ns °C 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) g For footnotes refer to the last page 1 08/07/07 IRFF320, JANTX2N6792, JANTXV2N6792 ELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.
International Rectifier
