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IRFF420 Datasheet PDF

International Rectifier IRFF420

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance.
Part No. IRFF420
Datasheet IRFF420 Download
Manufacturer
International Rectifier
Description HEXFET TRANSISTORS
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IRFF420 datasheet page 1 preview

FEATURES

: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction Storage Temperature Range Lead Temperature Weight 1.5 1.0 6.0 20 0.16 ±20 0.242 2.2 2.0 3.5 -55 to 150 Units A W W/°C V mJ A mJ V/ns °C 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) g For footnotes refer to the last page 1 08/06/07 IRFF420, JANTX2N6794, JANTXV2N6794

ELECTRICAL CHARACTERISTICS

@ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.
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